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Device and method for preparing magnesium nitride by laser irradiation

wallpapers News 2021-11-17
Device and method for preparing magnesium nitride by laser irradiation
The invention discloses a device and a method for preparing magnesium nitride by laser irradiation. The device includes a reactor, a laser placed above the reactor, and a gas delivery device, a vacuum device and a collector connected with the reactor through a pipeline. The operation is convenient, and the laser irradiation method is used, the reaction efficiency is high, and the magnesium compound can be directly used as the raw material for the preparation, which can be compared with the use of metallic magnesium as the raw material to achieve the manufacturing cost of magnesium nitride.
The band-pass filters (3a to 3c) pass light of a predetermined wavelength band among the light from the subject, and the predetermined wavelength band includes the wavelength region of the color of the laser light that is the detection target. The imaging unit of the cameras (2a to 2c) captures light that has passed through the band pass filters (3a to 3c). The control unit (4a to 4c) analyzes the power of each brightness level of the image signal generated based on the imaging signal output by the imaging unit, and detects a peak that is prominent in the power of a specific brightness level. The control unit (4a to 4c) detects the trajectory of the linear light in the frame of the video signal. The control unit (4a to 4c) detects the state of being irradiated with laser light when there is a peak at a specific brightness level and there is a light trajectory in the frame.
As the output of laser oscillators become higher, it becomes necessary to develop a longer linear shape beam for a process of laser annealing of a semiconductor film. However, if the length of the linear shape beam is from 300 to 1000 mm, or greater, then the optical path length of an optical system for forming the linear shape beam becomes very long, thereby increasing its footprint size. The present invention shortens the optical path length. In order to make the optical path length of the optical system as short as possible, and to increase only the length of the linear shape beam, curvature may be given to the semiconductor film in the longitudinal direction of the linear shape beam. For example, if the size of the linear shape beam is taken as 1 m×0.4 mm, then it is necessary for the optical path length of the optical system to be on the order of 10 m. If, however, the semiconductor film is given curvature with a radius of curvature of 40,000 mm, then the optical path length of the optical system can be halved to approximately 5 m, and a linear shape beam having an extremely uniform energy distribution can be obtained.
 

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